kw.\*:("Jonction émetteur base")
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Deep submicron InP DHBT technology with electroplated emitter and base contactsURTEAGA, M; ROWELL, P; PIERSON, R et al.DRC : Device research conference. 2004, pp 239-240, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper
Extraction of the base and emitter resistances in bipolar transistors using an accurate base resistance modelINGVARSON, Fredrik; LINDER, Martin; JEPPSON, Kjell O et al.2002 international conference on microelectronic test structures. 2002, pp 71-75, isbn 0-7803-7464-9, 5 p.Conference Paper
Preparation and characteristics of a superconducting base transistor with an Au/Ba1-xKxBiO3/niobium-doped SrTiO3 structureSUZUKI, H; YAMAMOTO, T; SUZUKI, S et al.Japanese journal of applied physics. 1993, Vol 32, Num 2, pp 783-788, issn 0021-4922, 1Article
280 GHz fT InP DHBT with 1.2 μm2 base-emitter junction area in MBE regrown-emitter technologyYUN WEI; SCOTT, Dennis W; YINGDA DONG et al.DRC : Device research conference. 2004, pp 237-238, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper
Modelling bulk and surface recombination in the sidewall space-charge layer of an emitter-base junctionROULSTON, D. J; ELTOUKHY, A. A.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 5, pp 205-209, issn 0143-7100Article
TRANSISTOR BASE-EMITTER JUNCTION PROTECTION IMPROVES RELIABILITYCORNISH LS.1973; ELECTRON. ENGNG; G.B.; DA. 1973; VOL. 45; NO 546; PP. 44-46; BIBL. 6 REF.Serial Issue
THERMAL VARIATION OF EMITTER BASE VOLTAGE OF COMPOSITE TRANSISTOR.NADAR KG.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 12; PP. 658-660; BIBL. 3 REF.Article
EMITTER-JUNCTION TEMPERATURE MEASUREMENT UNDER NONUNIFORM CURRENT AND TEMPERATURE DISTRIBUTION.ALWIN VC; NAVON DH.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 1; PP. 64-66; BIBL. 7 REF.Article
Transient analysis of stored charge in neutral base regionSUZUKI, K; SATOH, S; NAKAYAMA, N et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 5, pp 1164-1169, issn 0018-9383Article
The Hall effect in integrated magnetotransistorsNATHAN, A; MAENAKA, K; ALLEGRETTO, W et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 1, pp 108-117, issn 0018-9383, 1Article
DIE EINSTELLUNG DER BASIS-EMITTER-SPANNUNG VON INTEGRIERTEN TRANSISTOREN. = REGLAGE DE LA TENSION EMETTEUR-BASE DES TRANSISTORS INTEGRESGOERTH J.1976; NACHR.-TECH. Z.; DTSCH.; DA. 1976; VOL. 29; NO 11; PP. 807-808; BIBL. 6 REF.Article
PERIPHERAL EMITTER-BASE JUNCTION CAPACITANCE IN BIPOLAR TRANSISTORSROULSTON DJ; KUMAR RC.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 5; PP. 810-811; BIBL. 5 REF.Article
Verification of theoretical model for collector current in SiGe-based heterojunction bipolar transistorsHASANAH, L; NOOR, F. A; JUNG, C. U et al.Electronics letters. 2013, Vol 49, Num 21, pp 1347-1348, issn 0013-5194, 2 p.Article
Long-term reliability of silicon bipolar transistors subjected to low constraintsCROSSON, A; ESCOTTE, L; BAFLEUR, M et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1590-1594, issn 0026-2714, 5 p.Conference Paper
Darlington's contributions to transistor circuit designHODGES, D. A.IEEE transactions on circuits and systems. 1, Fundamental theory and applications. 1999, Vol 46, Num 1, pp 102-104, issn 1057-7122Article
An analysis of space-charge-region recombination in HBT'sSEARLES, S; PULFREY, D. L.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 4, pp 476-483, issn 0018-9383Article
Current grain rolloff in graded-base SiGe heterojunction bipolar transistorsCRABBE, E. F; CRESSLER, J. D; PATTON, G. L et al.IEEE electron device letters. 1993, Vol 14, Num 4, pp 193-195, issn 0741-3106Article
Modélisation numérique de la conduction électrique dans l'hétérojonction émetteur-base d'un transistor bipolaire à émetteur en silicium amorphe hydrogéné = Numerical modelling of the electrical conduction in the emitter-base heterojunction bipolar transistor (HBT) with an a-Si:H emitterSolhi, Abdeljalil; Bonnaud, Olivier.1993, 133 p.Thesis
Diffusion barrier properties of TiN films for submicron silicon bipolar technologiesKOBEDA, E; WARNOCK, J. D; GAMBINO, J. P et al.Journal of applied physics. 1992, Vol 72, Num 7, pp 2743-2748, issn 0021-8979Article
Trilayer lift-off metallization process using low temperature deposited SiNxLOTHIAN, J. R; REN, F; PEARTON, S. J et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1992, Vol 10, Num 6, pp 2361-2365, issn 1071-1023Conference Paper
Cryogenic operation of GaAs bipolar transistors with inverted base dopingDODD, P. E; LOVEJOY, M. L; MELLOCH, M. R et al.Electronics Letters. 1991, Vol 27, Num 10, pp 860-861, issn 0013-5194Article
Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistorsWON-SEONG LEE; DAISUKE UEDA; TONY MA et al.IEEE electron device letters. 1989, Vol 10, Num 5, pp 200-202, issn 0741-3106Article
Base resistance scaling for SiGeC HBTs with a fully nickel-silicided extrinsic baseGUNNAR MALM, B; HARALSON, Erik; SUVAR, Erdal et al.IEEE electron device letters. 2005, Vol 26, Num 4, pp 246-248, issn 0741-3106, 3 p.Article
Influence of device geometry on DC, AC and SOA of high speed HV bipolar transistorsDUTTA, Ranadeep; KRUTSICK, Thomas; SIKET, John et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 310-313, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper
A new junction parameters determination using the double exponential modelDIB, S; KHOURY, A; PELANCHON, F et al.Active and passive electronic components. 2002, Vol 25, Num 3, pp 225-232, issn 0882-7516Article